BS850 Datasheet, PDF (1/5 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

BS850
DMOS Transistors (P-Channel)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
1
2
.037(0.95) .037(0.95)
FEATURES
♦ High input impedance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking
S50
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous)
Power Dissipation at T_SB = 50 °C
Junction Temperature
Storage Temperature Range
1) _{Device on fiberglass substrate, see layout}
Inverse Diode
Max. Forward Current (continuous)
at T_amb = 25 °C
Forward Voltage Drop (typ.)
at V_GS = 0, I_F = 0.12 A, T_j = 25 °C
Symbol
–V_DSS
–V_DGS
V_GS
–I_D
P_tot
T_j
T_S
Value
Unit
60
V
60
V
± 20
V
250
mA
0.310¹⁾
W
150
°C
–65 to +150
°C
Symbol
Value
Unit
I_F
0.3
A
V_F
0.85
V
4/98