BS250 Datasheet, PDF (1/5 Pages) NXP Semiconductors – P-channel enhancement mode vertical D-MOS transistor

TO-92
.181 (4.6)
BS250
DMOS Transistors (P-Channel)
.142 (3.6)
FEATURES
♦ High input impedance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
max.∅ .022 (0.55)
.098 (2.5)
D
S
G
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
On special request, this transistor is also manufactured
in the pin configuration TO-18.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Drain-Source Voltage
–V_DSS
60
V
Drain-Gate Voltage
–V_DGS
60
V
Gate-Source Voltage (pulsed)
V_GS
± 20
V
Drain Current (continuous)
–I_D
250
mA
Power Dissipation at T_amb = 25 °C
P_tot
0.83¹⁾
W
Junction Temperature
T_j
150
°C
Storage Temperature Range
T_S
–65 to +150
°C
1) _{Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.}
Inverse Diode
Max. Forward Current (continuous)
at T_amb = 25 °C
Forward Voltage Drop (typ.)
at V_GS = 0, I_F = 0.12 A, T_j = 25 °C
Symbol
Value
Unit
I_F
0.3
A
V_F
0.85
V
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