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BS209 Datasheet, PDF (1/2 Pages) General Semiconductor – DMOS Transistors (P-Channel)
BS209
DMOS Transistors (P-Channel)
TO-92
.181 (4.6)
.142 (3.6)
max.∅ .022 (0.55)
.098 (2.5)
D
S
G
Dimensions in inches and (millimeters)
FEATURES
♦ High input impedance
♦ Low gate threshold voltage
♦ Low drain-source ON resistance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
–VDSS
400
V
–VDGS
400
V
VGS
±20
V
Drain Current (continuous) at Tamb = 25 °C
–ID
120
mA
Power Dissipation at Tamb = 25 °C
Ptot
8301)
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Inverse Diode
Max. Forward Current (continuous)
at Tamb = 25 °C
Forward Voltage Drop (typ.)
at VGS = 0 V, IF = 400 mA, Tj = 25 °C
Symbol
Value
Unit
IF
400
mA
VF
1.0
V
4/98