BS109 Datasheet, PDF (1/2 Pages) General Semiconductor – DMOS Transistors (N-Channel)

BS109
DMOS Transistors (N-Channel)
TO-92
.181 (4.6)
.142 (3.6)
FEATURES
♦ High input impedance
♦ Low gate threshold voltage
♦ Low drain-source ON resistance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
max.∅ .022 (0.55)
.098 (2.5)
D
S
G
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Drain-Source Voltage
V_DSS
400
V
Drain-Gate Voltage
V_DGS
400
V
Gate-Source Voltage (pulsed)
V_GS
±20
V
Drain Current (continuous) at T_amb = 25 °C
I_D
120
mA
Power Dissipation at T_amb = 25 °C
P_tot
830¹⁾
mW
Junction Temperature
T_j
150
°C
Storage Temperature Range
T_S
–65 to +150
°C
1) _{Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.}
Inverse Diode
Max. Forward Current (continuous)
at T_amb = 25 °C
Forward Voltage Drop (typ.)
at V_GS = 0 V, I_F = 400 mA, T_j = 25 °C
Symbol
Value
Unit
I_F
400
mA
V_F
1.0
V
4/98