BC846 Datasheet, PDF (1/6 Pages) NXP Semiconductors – NPN general purpose transistors

BC846 THRU BC849
Small Signal Transistors (NPN)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
1
2
.037(0.95) .037(0.95)
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
FEATURES
♦ _{NPN Silicon Epitaxial Planar Transistors}
for switching and AF amplifier applications.
♦ Especially suited for automatic insertion in
thick- and thin-film circuits.
♦ These transistors are subdivided into three
groups A, B and C according to their current gain. The
type BC846 is available in groups A and B, however, the
types BC847 and BC848 can be supplied in all three
groups. The BC849 is a low noise type available in groups
B and C. As complementary types, the PNP transistors
BC856...BC859 are recommended.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking code
Type
BC846A
B
BC847A
B
C
Marking
1A
1B
1E
1F
1G
Type
BC848A
B
C
BC849B
C
Marking
1J
1K
1L
2B
2C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T_SB = 50 °C
Junction Temperature
Storage Temperature Range
1) _{Device on fiberglass substrate, see layout}
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
BC846, BC847
BC848, BC849
Symbol
V_CBO
V_CBO
V_CBO
V_CES
V_CES
V_CES
V_CEO
V_CEO
V_CEO
V_EBO
V_EBO
I_C
I_CM
I_BM
–I_EM
P_tot
T_j
T_S
Value
Unit
80
V
50
V
30
V
80
V
50
V
30
V
65
V
45
V
30
V
6
V
5
V
100
mA
200
mA
200
mA
200
mA
310¹⁾
mW
150
°C
–65 to +150
°C
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