BC556 Datasheet, PDF (1/6 Pages) Motorola, Inc – Amplifier Transistors

BC556 THRU BC559
Small Signal Transistors (PNP)
TO-92
.181 (4.6)
.142 (3.6)
max.∅ .022 (0.55)
.098 (2.5)
C
E
B
Dimensions in inches and (millimeters)
FEATURES
♦ PNP Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
♦ _{These transistors are subdivided into}
three groups A, B and C according to
their current gain. The type BC556 is avail-
able in groups A and B, however, the types
BC557 and BC558 can be supplied in all three
groups. The BC559 is a low-noise type available
in all three groups. As complementary types, the
NPN transistors BC546 … BC549 are recommended.
♦ _{On special request, these transistors are also manufac-}
tured in the pin configuration TO-18.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
BC556 –V_CBO
80
V
BC557 –V_CBO
50
V
BC558, BC559 –V_CBO
30
V
Collector-Emitter Voltage
BC556 –V_CES
80
V
BC557 –V_CES
50
V
BC558, BC559 –V_CES
30
V
Collector-Emitter Voltage
BC556 –V_CEO
65
V
BC557 –V_CEO
45
V
BC558, BC559 –V_CEO
30
V
Emitter-Base Voltage
–V_EBO
5
V
Collector Current
–I_C
100
mA
Peak Collector Current
–I_CM
200
mA
Peak Base Current
–I_BM
200
mA
Peak Emitter Current
I_EM
200
mA
Power Dissipation at T_amb = 25 °C
P_tot
500¹⁾
mW
Junction Temperature
T_j
150
°C
Storage Temperature Range
T_S
–65 to +150
°C
1) _{Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.}
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