BAV70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
1
2
.037(0.95) .037(0.95)
BAV70
Small Signal Diodes
FEATURES
♦ Silicon Epitaxial Planar Diodes
♦ Fast switching dual diode with common
cathode
♦ _{This diode is also available in other}
configurations including: a dual anode to cathode
with type designation BAV99, a dual common anode
with type designation BAW56, and a single diode with
type designation BAL99.
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Marking
JJ
3
1
2
Top View
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings for a single diode at 25 °C ambient temperature unless otherwise specified.
Reverse Voltage, Peak Reverse Voltage
Forward Current (continuous)
Non-Repetitive Peak Forward Current
at t = 1 µs
at t = 1 ms
at t = 1 s
Power Dissipation at T_amb = 25 °C
Junction Temperature
Storage Temperature Range
1) _{Device on fiberglass substrate, see layout}
Symbol
V_R, V_RM
I_F
I_FSM
I_FSM
I_FSM
P_tot
T_j
T_S
Value
Unit
70
V
250
mA
2
A
1
A
0.5
A
350¹⁾
mW
150
°C
–65 to +150
°C
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