BAT86 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier diode

NEW PRODUCT
NEW PRODUCT
BAT86
Schottky Diodes
NEW PRODUCT
DO-35
max. ∅.079 (2.0)
Cathode
Mark
max. ∅.020 (0.52)
Dimensions in inches and (millimeters)
FEATURES
♦ For general purpose applications.
♦ This diode features low turn-on volt-
age. The devices are protected by a PN
junction guard ring against excessive volt-
age, such as electrostatic discharges.
♦ Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring. The low for-
ward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and
coupling diodes for fast switching and low logic level
applications.
♦ This diode is also available in the Mini-MELF case
with the type designation BAS86.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Min.
Max.
Unit
Continuous Reverse Voltage
Forward Continuous Current at T_amb = 25 °C
Repetitive Forward Current
at t_p < 1 s, υ ≤ 0.5, T_amb = 25 °C
Power Dissipation at T_amb = 25 °C
Junction Temperature
V_R
–
I_F
–
I_FRM
–
P_tot
–
T_j
–
50
V
200¹⁾
mA
500¹⁾
mA
200¹⁾
mW
125
°C
Ambient Operating Temperature Range
T_amb
–65
+125
°C
Storage Temperature Range
T_S
–65
+150
°C
1) _{Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.}
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