BAS40 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS40 THRU BAS40-06
Schottky Diodes
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
1
2
.037(0.95) .037(0.95)
FEATURES
♦ These diodes feature very low turn-on
voltage and fast switching.
♦ These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
3
3
Top View
1
2
BAS40
Marking: 43
1
2
BAS40-04
Marking: 44
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
3
1
2
BAS40-05
Marking: 45
3
Top View
1
2
BAS40-06
Marking: 46
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE
Ratings at 25 °C ambient temperature unless otherwise specified
Repetitive Peak Reverse Voltage
Forward Continuous Current at T_amb = 25 °C
Surge Forward Current at t_p < 1 s, T_amb = 25 °C
Power Dissipation¹⁾ at T_amb = 25 °C
Junction Temperature
Storage Temperature Range
1) _{Device on fiberglass substrate, see layout}
Symbol
V_RRM
I_F
I_FSM
P_tot
T_j
T_S
Value
Unit
40
V
200¹⁾
mA
600¹⁾
mA
200¹⁾
mW
150
°C
–55 to +150
°C
4/98