BAS19 Datasheet, PDF (1/3 Pages) NXP Semiconductors – General purpose diodes

BAS19, BAS20, BAS21
Small Signal Diodes
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
1
2
.037(0.95) .037(0.95)
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
3
1
2
Top View
Marking
BAS19 = A8
BAS20 = A81
BAS21 = A82
FEATURES
♦ Silicon Planar Epitaxial High-Speed
Diodes
♦ _{For switching and general purpose}
applications.
♦ _{These diodes are also available in other case styles includ-}
ing: the SOD-123 case with the type designation BAV19W -
BAV21W, the MiniMELF case with the type designation
BAV101 - BAV103, and the DO-35 case with the type desig-
nation BAV19 - BAV21.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Continuous Reverse Voltage
BAS19
BAS20
BAS21
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
Non-Repetitive Peak Forward Current
at t = 1 µs
at t = 1 s
Average Rectified Forward Current
(averaged over any 20 ms period)
Forward DC Current at T_amb = 25 °C
Repetitive Peak Forward Current
Power Dissipation up to T_amb = 25 °C
Junction Temperature
Storage Temperature Range
1) _{Measured under pulse conditions; Pulse time = tp ≤ 0.3 ms.}
2) _{Device on fiberglass substrate, see layout.}
Symbol
V_R
V_R
V_R
V_RRM
V_RRM
V_RRM
I_FSM
I_FSM
I_F(AV)
I_F
I_FRM
P_tot
T_j
T_S
Value
Unit
100
V
150
V
200
V
120
V
200
V
250
V
2.5
A
0.5
A
200¹⁾
mA
200²⁾
mA
625
mA
200²⁾
mW
150
°C
– 65 to +150
°C
4/98