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2N7002 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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2N7002
DMOS Transistors (N-Channel)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
1
2
.037(0.95) .037(0.95)
FEATURES
⦠High input impedance
⦠High-speed switching
⦠No minority carrier storage time
⦠CMOS logic compatible input
⦠No minority carrier storage time
⦠CMOS logic compatible input
⦠No thermal runaway
⦠No secondary breakdown
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking
S72
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation at TC = 50 °C
Junction Temperature
Storage Temperature Range
1) Ceramic Substrate 0.7mm; 2.5 cm2 area.
Symbol
VDSS
VDGS
VGS
ID
Ptot
Tj
TS
Value
Unit
60
V
60
V
±20
V
250
mA
0.3101)
W
150
°C
â55 to +150
°C
Inverse Diode
Max. Forward Current (continuous)
at Tamb = 25 °C
Forward Voltage Drop (typ.)
at VGS = 0, IF = 0.3 A, Tj = 25 °C
Symbol
Value
Unit
IF
0.3
A
VF
0.85
V
4/98
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