1N914 Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed diode

1N914
SMALL SIGNAL DIODE
DO-35
max. ∅.079 (2.0)
Cathode
Mark
max. ∅.020 (0.52)
Dimensions in inches and (millimeters)
FEATURES
♦ Silicon Epitaxial Planar Diode
♦ For general purpose and switching.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Peak Reverse Voltage
Maximum Average Rectified Current
Maximum Power Dissipation at Tamb = 25 °C
Maximum Junction Temperature
Maximum Forward Voltage Drop at IF = 10 mA
Maximum Reverse Current at VR = 20 V
VR = 75 V
Max. Reverse Recovery Time at IF = IR = 10 mA, VR = 6 V,
RL = 100 Ω, to Irr = 1 mA
Maximum Capacitance at VR=0, f=1.0 MHZ
SYMBOL
VRM
Io
Ptot
Tj
VF
IR
trr
Ctot
VALUE
UNIT
100
V
75
mA
500
mW
200
°C
1.0
V
25
nA
5.0
µA
4.0
ns
4.0
pF
11/09/98