1N5711 Datasheet, PDF (1/2 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

1N5711 and 1N6263
Schottky Diodes
DO-204AH (DO-35 Glass)
Dimensions in inches
and (millimeters)
Features
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring. The low for-
ward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low
logic level applications.
• This diode is also available in the MiniMELF case
with type designation LL5711 and LL6263.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak Inverse Voltage
1N5711
70
1N6263
VRRM
60
V
Power Dissipation (Infinite Heatsink)
Ptot
400⁽¹⁾
mW
Maximum Single Cycle Surge 10 µs Square Wave
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
IFSM
RΘJA
Tj
TS
2.0
0.3⁽¹⁾
125⁽¹⁾
–55 to +150⁽¹⁾
A
°C/mW
°C
°C
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Breakdown Voltage
1N5711
1N6263 ^V(BR)R
IR = 10µA
Leakage Current
IR
VR = 50V
Forward Voltage Drop
VF
IF = 1mA
IF = 15mA
Junction Capacitance
Ctot
VR = 0V, f = 1MHz
Reverse Recovery Time
trr
IF = IR = 5mA,
recover to 0.1IR
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Min
Typ
Max
Unit
70
—
—
60
—
—
V
—
—
200
nA
—
—
—
—
0.41
1.0
V
—
—
2.2
pF
—
—
1
ns
10/6/00