1N4448 Datasheet, PDF (1/4 Pages) Rectron Semiconductor – SIGNAL DIODE

1N4448
Small Signal Diodes
DO-35
max. ∅.079 (2.0)
Cathode
Mark
FEATURES
♦ Silicon Epitaxial Planar Diode
♦ Fast switching diode.
♦ This diode is also available in other
case styles including: the SOD-123
case with the type designation
1N4448W, the MiniMELF case with the
type designation LL4448, and the SOT23
case with the type designation IMBD4448.
max. ^âˆ.020 (0.52)
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Reverse Voltage
V_R
75
V
Peak Reverse Voltage
V_RM
100
V
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T_amb = 25 °C and f ≥ 50 Hz
I₀
150¹⁾
mA
Surge Forward Current at t < 1 s and T_j = 25 °C
I_FSM
500
mA
Power Dissipation at T_amb = 25 °C
P_tot
500¹⁾
mW
Junction Temperature
T_j
175
°C
Storage Temperature Range
T_S
–65 to +175
°C
1) _{Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.}
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