1N4151 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed diodes

1N4151
SMALL SIGNAL DIODES
DO-35
max. ÆŸ.079 (2.0)
Cathode
Mark
FEATURES
¨ Silicon Epitaxial Planar Diode
¨ Fast switching diode.
¨ This diode is also available in other case
styles including the SOD-123
case with the type designation 1N4151W
and the Mini-MELF case with the type
designation LL4151.
MECHANICAL DATA
max. ÆŸ.020 (0.52)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
Dimensions in inches and (millimeters)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
Ratings at 25¡C ambient temperature unless otherwise specified.
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 ¡C and f ³ 50 Hz
Surge Forward Current at t < 1s and Tj = 25¡C
Power Dissipation at Tamb = 25¡C
Junction Temperature
Storage Temperature Range
SYMBOL
VR
VRM
IO
IFSM
Ptot
Tj
TS
NOTES:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
VALUE
50
75
150⁽¹⁾
500
500⁽¹⁾
175
Ð 65 to +175
UNIT
Volts
Volts
mA
mA
mW
¡C
¡C
1/4/99