1N4150 Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed diodes"

1N4150
Small Signal Diodes
DO-35
max. ∅.079 (2.0)
Cathode
Mark
FEATURES
♦ Silicon Epitaxial Planar Diode
♦ For general purpose and switch-
ing.
♦ _{This diode is also available in other}
case styles including: the SOD-123 case
with the type designation 1N4150W and the
MiniMELF case with the type designation
LL4150.
max. ^âˆ.020 (0.52)
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Peak Reverse Voltage
V_RM
50
V
Maximum Average Rectified Current
I₀
200
mA
Maximum Power Dissipation at T_amb = 25 °C
P_tot
500
mW
Maximum Junction Temperature
T_j
200
°C
Maximum Forward Voltage Drop at I_F = 200 mA
V_F
1.0
V
Maximum Reverse Current at V_R = 50 V
I_R
100
nA
Max. Reverse Recovery Time at I_F = I_R = 10 to 200 mA, to 0.1 I_F t_rr
4.0
ns
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