GMR10H100C_1 Datasheet, PDF (3/6 Pages) Gamma Microelectronics Inc. – 10A SCHOTTKY RECTIFIER

GMR10H100C
10A SCHOTTKY RECTIFIER
Absolute Maximum Ratings
PARAMETER
SYMBOL VALUE UNITS
Repetitive Peak Reverse Voltage
RMS Forward Current
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum Operating Junction Temperature
Operating storage temperature
Voltage Rate of Change
Electrostatic Discharge Voltage. JEDEC Method. ESD HBM.
Contact
V_RPM
I_F(RMS)
I_FSM
T_J,
T_STG
dV/dt
V_ESD
100
10
135
175
-45 to +150
10,000
±8
V
A
A
°C
°C
V/µs
kV
Thermal Characteristics
PARAMETER
SYMBOL
Typical thermal resistance
Ó¨_JC
TO220AB
2.4
TO220FPAB
4.2
TO-3PF
1.2
UNITS
°C/W
Electrical Characteristics (per diode) T_J = 25°C, Unless otherwise noted
PARAMETER
SYMBOL
Test Condition
Min Typ Max
DC Forward Voltage
Average Rectified Forward
Current
V_F
I_F(AV)
Maximum Reverse Current I_R
I_F = 5A
0.77 0.81
5.0
V_R = 150V
-
-
5
V_R = 150V, T_J = 125°C
-
5
Units
V
A
µA
mA
3