GMR10H60C Datasheet, PDF (2/5 Pages) Gamma Microelectronics Inc. – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

AA
MICROELECTRONICS
Power Discrete
GMR10H60C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MARKING INFORMATION
TO - 220AB
10H60C
AYW W
ORDERING INFORMATION
Ordering Number
GMR10H60CTB3T
GMR10H60CTBF3T
Package
TO - 220AB
TO - 220FPAB
* For detail Ordering Number identification, please see last page.
A : Assembly Location
Y : Year
WW : Weekly
Shipping
50 Units/ Tube
50 Units/ Tube
ABSOLUTE RATINGS (T_C = 25°C)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(AV) Maximum average forward rectified current
per diode
per device
Value
Unit
60
V
5
A
10
I_FSM
Peak forward surge current 8.3ms single half sine-wave superimposed
on rated load per leg. (Non-Repetitive)
150
A
T_j, T_stg Operating junction temperature and storage temperature
-45 to + 150 °C
Thermal Characteristics (T_C = 25°C unless otherwise noted)
Parameter
Symbol
TO-220AB
TO-220FPAB
Typical thermal resistance per leg
R JC
2.4
4.2
Unit
°C/W
Electrical Characteristics (T_C= 25°C unless otherwise noted)
Parameter
Maximum instantaneous
forward voltage per leg (Note 1)
I_F = 5A,
I_F = 5A,
I_F = 10A,
I_F = 10A,
Symbol
T_C = 25°C
T_C = 125°C
T_C = 25°C
V_F
T_C = 125°C
Value
0.75
0.65
-
-
Unit
V
Maximum reverse current per leg
2
at working peak reverse voltage (Note 1)
T_J = 25°C
T_J = 125°C
I_R
10
µA
10
mA
Note 1: Pulse Test: Pulse Width= 300µs, Duty Cycle 2.0%