2SA733 Datasheet, PDF (1/4 Pages) NEC – PNP SILICON TRANSISTOR

Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Excellent h_FE Linearity.
z Power dissipation：P_D=250mW.
z High h_FE.
Pb
Lead-free
2SA733
APPLICATIONS
z Designed for use in driver stage of amplifier.
ORDERING INFORMATION
Type No.
Marking
2SA733
CS
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j,T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-60
-50
-5
-100
250
-55 to +150
Units
V
V
V
mA
mW
℃
C009
Rev.A
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