MB85R2002_09 Datasheet, PDF (6/12 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 2 M Bit (128 K × 16)

MB85R2002
■ ELECTRICAL CHARACTERISTICS
1. DC CHARACTERISTICS
(within recommended operating conditions)
Parameter
Symbol
Conditions
Value
Unit
Min Typ Max
Input Leakage Current
|ILI| VIN = 0 V to VCC
⎯
⎯ 10 μA
Output Leakage Current |ILO| VOUT = 0 V to VCC, CE1 = VIH or OE = VIH
⎯
⎯ 10 μA
Supply Current
ICC CE1 = 0.2 V, CE2 = VCC − 0.2 V, IOUT = 0 mA*¹ ⎯
10 15 mA
CE1 ≥ VCC − 0.2 V
Standby Current
CE2 ≤ 0.2 V*²
ISB
OE ≥ VCC − 0.2 V, WE ≥ VCC − 0.2 V*²
⎯
10 50 μA
LB ≥ VCC − 0.2 V, UB ≥ VCC − 0.2 V*²
Output Voltage (high)
VOH IOH = − 2.0 mA
VCC × 0.8 ⎯ ⎯ V
Output Voltage (low)
VOL IOL = 2.0 mA
⎯
⎯ 0.4 V
*1 : During the measurement of ICC , the Address, Data In were taken to only change once per active cycle.
IOUT : output current
*2 : All pins other than setting pins should be input at the CMOS level voltages such as H ≥ VCC − 0.2 V, L ≤ 0.2 V.
2. AC CHARACTERISTICS
• AC TEST CONDITIONS
Supply Voltage : 3.0 V to 3.6 V
Operating Temperature : −40 °C to +85 °C
Input Voltage Amplitude : 0.3 V to 2.7 V
Input Rising Time : 5 ns
Input Falling Time : 5 ns
Input Evaluation Level : 2.0 V / 0.8 V
Output Evaluation Level : 2.0 V / 0.8 V
Output Impedance : 50 pF
(1) Read Operation
Parameter
Read Cycle time
CE1 Active Time
CE2 Active Time
OE Active Time
LB, UB Active Time
Pre-charge Time
Address Setup Time
Address Hold Time
OE Setup Time
LB, UB Setup Time
Output Data Hold time
Output Set Time
CE1 Access Time
CE2 Access Time
OE Access Time
Output Floating Time
6
(within recommended operating conditions)
Symbol
tRC
tCA1
tCA2
tRP
tBP
tPC
tAS
tAH
tES
tBS
tOH
tLZ
tCE1
tCE2
tOE
tOHZ
Value
Min
Max
150
⎯
120
⎯
120
⎯
120
⎯
120
⎯
20
⎯
5
⎯
50
⎯
5
⎯
5
⎯
0
⎯
30
⎯
⎯
100
⎯
100
⎯
100
⎯
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DS05-13108-4E