MB84VA2000 Datasheet, PDF (4/29 Pages) Fujitsu Component Limited. – 8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM

MB84VA2000-10/MB84VA2001-10
s PRODUCT LINE UP
Ordering Part No.
VCC
=
3.0
V
+0.6 V
–0.3 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
Flash Memory
SRAM
MB84VA2000-10/MB84VA2001-10
100
100
100
100
40
50
s BUS OPERATIONS
Table 2 User Bus Operations
Operation (1), (3)
CEf
CE1s CE2s
OE
WE
Full Standby
H
X
H
X
X
X
L
Output Disable
X
X
X
H
H
Read from Flash (2)
H
X
L
L
H
X
L
Write to Flash
H
X
L
H
L
X
L
Read from SRAM
H
L
H
L
H
Write to SRAM
H
L
H
X
L
Flash Hardware Reset
H
X
X
X
X
X
L
Legend: L = VIL, H = VIH, X = VIL or VIH. See DC Characteristics for voltage levels.
Notes: 1. Other operations except for indicated this column are inhibited.
2. WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
3. Do not apply CEf = VIL, CE1s = VIL and CE2s = VIH at a time.
DQ0 to DQ7
HIGH-Z
HIGH-Z
DOUT
DIN
DOUT
DIN
HIGH-Z
RESET
H
H
H
H
H
H
L
4