MB39A102 Datasheet, PDF (20/24 Pages) Fujitsu Component Limited. – Evaluation Board

MB39A102
3. CH2, CH3 : (Transformer Conversion Type)
VIN (Max) = 6 V
VIN (Min) = 2.5 V
VO2-1, VO3-1 = 15 V
VO2-2, VO3-2 = 5 V
VO2-3 = −7.5 V
IO2-1, IO3-1 = 10 mA
IO2-2, IO3-2 = 50 mA
IO2-3 = −5 mA
(1) P-ch MOS FET (MCH3309 (SANYO product) )
VDS = −20 V, VGS = ±10 V, ID = −1.5 A, RDS (ON) = 340 mΩ (Max) , Qg = 3.2 nC
The FET’s rated drain current must be at least 0.7 A.
The FET’s rated drain-source and gate-source voltages must be at least 9 V.
(2) Schottky Barrier Diode (SB05-05CP (SANYO product) )
VRRM (repeated peak reverse voltage) = 50 V,
IF (average output current) = 500 mA, IFSM (surge forward current) = 5 A
The each diode rated parameter must be at least VRRM (repeated peak reverse voltage) = 49 V,
IF (mean output current) = 50 mA, IFSM (surge forward current) = 0.3 A.
4. CH4 : 3.3 V output (Sepic Type)
VIN (Min) = 2.5 V, IO = 500 mA, fOSC = 500 kHz
(1) NPN Tr (CPH3206 (SANYO product) )
VCEO = 15 V, VCBO = 15 V, IC = 3 A, hFE = 200 (Min)
• Collector current: Peak value
The peak collector current of this Tr must be within its rated current.
If the Tr’s peak collector current is IC, it is obtained by the following formula.
VO
= VIN ×
tON
tOFF
tON = t ×
VO
VIN+VO
=
1
fOSC
×
VO
VIN+VO
IC ≥
VO+VIN (Min)
VIN (Min)
( ) ^×
IO +
1
2
1
L3
+
1
L4
× VIN (Min) × tON
( ) ^≥
3.3+2.5
2.5
× 0.5 +
1
2
1
10×10^−6
+
1
15×10^−6
×
2.5
×
1
500×10³
× 0.69
≥ 1.397 A
Collector-emitter voltage / Collector-base voltage
The collector-emitter and collector-base voltages of the Tr should be in the rated voltage value of Tr.
The Tr’s collector-emitter voltage (VCEO) and collector-base voltage (VCBO) are obtained by the following formula.
VCEO = VCBO ≥ VIN (Max) + VO
≥ 6+3.3
≥ 9.3 V
20