MB3891 Datasheet, PDF (19/29 Pages) Fujitsu Component Limited. – Power Management IC for GSM Mobile Phone

MB3891
Efficiency vs. power supply voltage
(VSIMOUT Chargepump)
100
Ta = +25 °C
90
VSIM-ON = “H”
80
SIMPROG = “L”
70
60
50
40
ILOAD = −10 mA
30
20
ILOAD = −1 mA
10
0
3.0
3.5
4.0
4.5
5.0
5.5
Power supply voltage VCC-VSIM (V)
Efficiency vs. power supply voltage
(VSIMOUT Chargepump)
100
90
80
70
60
50
40
30
20
10
0
3.0
Ta = +25 °C
VSIM-ON = “H”
SIMPROG = “H”
ILOAD = −10 mA
ILOAD = −1 mA
3.5
4.0
4.5
5.0
5.5
Power supply voltage VCC-VSIM (V)
100
90
80
70
60
50
40
30
20
10
0
0
Efficiency vs. load current
(VSIMOUT Chargepump)
Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
VSIM-ON = “H”
SIMPROG = “L”
VCC-VSIM = 5.5 V
VCC-VSIM = 3.6 V
VCC-VSIM = 3.1 V
−5
−10
−15
−20
Load current ILOAD (mA)
Output voltage rising waveforms
(VSIMOUT Chargepump)
10
5
VSIM-ON
0
VSIMOUT
5
4
3
2
Ta = +25 °C
1
VBAT = VCC-VSIM = 3.6 V
SIMPROG = “H”
0
VSIMOUT = 510 Ω
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
t (ms)
Efficiency vs. load current
(VSIMOUT Chargepump)
100
90
80
70
60
50
40
30
20
10
0
0
VCC-VSIM = 3.1 V
VCC-VSIM = 3.6 V
VCC-VSIM = 5.5 V
Ta = +25 °C
VBAT = VCC-VSIM = 3.6 V
VSIM-ON = “H”
SIMPROG = “H”
−5
−10
−15
−20
Load current ILOAD (mA)
Output voltage rising waveforms
(VSIMOUT Chargepump)
10
5
VSIM-ON
0
VSIMOUT
3
2
Ta = +25 °C
1
VBAT = VCC-VSIM = 3.6 V
SIMPROG = “L”
0
VSIMOUT = 510 Ω
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
t (ms)
(Continued)
19