MBM30LV0128 Datasheet, PDF (1/41 Pages) Fujitsu Component Limited. – 128 M (16 M X 8) BIT NAND-type

FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
DS05-20885-1E
128 M (16 M × 8) BIT NAND-type
MBM30LV0128
s DESCRIPTION
The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages
× 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
store ECC code (Specifications indicated are on condition that ECC system would be combined) . Program and
read data is transferred between the memory array and page register in 528 byte increments. A 528 byte page
can be programmed in 200 µs and an 16 K byte block can be erased in 2 ms under typical conditions. An internal
controller automates all programs and erases operations including the verification of data margins. Data within a
page can be read with a 50 ns cycle time per byte. The I/O pins are utilized for both address and data input/output
as well as command inputs. The MBM30LV0128 is an ideal solution for applications requiring mass non-volatile
storage such as solid state file storage, digital recording, image file memory for still cameras, and other uses
which require high density and non-volatile storage.
s PRODUCT LINE UP
Part No.
Operating Temperature
VCC
Read
Power Dissipation (Max.)
Erase / Program
TTL Standby
CMOS Standby
MBM30LV0128
−40 °C to +85 °C
+2.7 V to +3.6 V
72 mW
72 mW
3.6 mW
0.18 mW