MBM30LV0032 Datasheet, PDF (1/42 Pages) Fujitsu Component Limited. – 32M (4M X 8) BIT NAND-type

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20884-2E
FLASH MEMORY
CMOS
32M (4M × 8) BIT NAND-type
MBM30LV0032
s DESCRIPTION
The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages
× 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store
ECC code(Specifications indicated are on condition that ECC system would be combined.). Program and read
data is transferred between the memory array and page register in 528 byte increments. A 528 byte page can be
programmed in 200 µs and an 8K byte block can be erased in 2 ms under typical conditions. An internal controller
automates all program and erase operations including the verification of data margins. Data within a page can
be read with a 50 ns cycle time per byte. The I/O pins are utilized for both address and data input/output as well
as command inputs. The MBM30LV0032 is an ideal solution for applications requiring mass non-volatile storage
such as solid state file storage, digital recording, image file memory for still cameras, and other uses which require
high density and non-volatile storage.
s PRODUCT LINE UP
Part No.
Operating Temperature
VCC
Read
Power Dissipation (Max.)
Erase / Program
TTL Standby
CMOS Standby
s PACKAGES
44-pin plastic TSOP (II)
Marking Side
MBM30LV0032
–40°C to +85°C
+2.7 V to +3.6 V
72 mW
72 mW
3.6 mW
0.18 mW
(FPT-44P-M07)
(Normal Bend)
Marking Side
(FPT-44P-M08)
(Reverse Bend)