MBM29PL3200TE Datasheet, PDF (1/59 Pages) Fujitsu Component Limited. – 32 M (2 M X 16/1 M X 32) BIT

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20890-1E
PAGE MODE FLASH MEMORY
CMOS
32 M (2 M × 16/1 M × 32) BIT
MBM29PL3200TE/BE 70/90
s DESCRIPTION
The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits
each or 1 M words of 32 bits each. The device is offered in 90-pin SSOP and 84-ball FBGA packages. This device
is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC
are not required for write or erase operations. The device can also be reprogrammed in standard EPROM pro-
grammers.
(Continued)
s PRODUCT LINE-UP
Part No.
Ordering Part No.
VCC
=
3.3
V +0.3
−0.3
V
V
VCC
=
3.0
V +0.6
−0.3
V
V
Max. Random Address Access Time (ns)
Max. Page Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
MBM29PL3200TE/BE
70


90
70
90
25
35
70
90
25
35
s PACKAGES
90-pin plastic SSOP
84-ball plastic FBGA
(FPT-90P-M01)
(BGA-84P-M01)