MBM29PL160TD Datasheet, PDF (1/51 Pages) Fujitsu Component Limited. – 16M (2M x 8/1M x 16) BIT

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20872-1E
PAGE MODE FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29PL160TD-75/-90/MBM29PL160BD-75/-90
s FEATURES
• Single 3.0 V read, program and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E²PROMs
• Compatible with MASK ROM pinouts
48-pin TSOP (I) (Package suffix: PFTN-Normal Bend Type, PFTR-Reversed Bend Type)
44-pin SOP (Package suffix: PF)
• Minimum 100,000 program/erase cycles
• High performance
25 ns maximum page access time (75ns maximum random access time)
• An 8 words page read mode function
• Sector erase architecture
One 8K word, two 4K words, one 112K word, and seven 128K words sectors in word mode
One 16K byte, two 8K bytes, one 224K byte, and seven 256K bytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded Erase^TM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded program^TM Algorithms
Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
• Low VCC write inhibit ≤ 2.5 V
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Embedded Erase^TM and Embedded Program^TM are trademarks of Advanced Micro Devices, Inc.