MBM29PL12LM Datasheet, PDF (1/72 Pages) Fujitsu Component Limited. – FLASH MEMORY 128 M (16M ®8/8M ®16) BIT

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20914-2E
FLASH MEMORY
CMOS
128 M (16M × 8/8M × 16) BIT
MirrorFlash^TM*
MBM29PL12LM 10
■ DESCRIPTION
The MBM29PL12LM is a 128M-bit, 3.0 V-only Flash memory organized as 16M bytes by 8 bits or 8M words by
16 bits. The MBM29PL12LM is offered in 58-pin TSOP (1) and 80-ball FBGA. The device is designed to be
programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write
or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
■ PRODUCT LINE UP
(Continued)
Part No.
MBM29PL12LM
10
VCC
Max Address Access Time
3.0 V to 3.6 V
100 ns
Max CE Access Time
100 ns
Max Page Read Access Time
30 ns
Notes : • Programming in byte mode ( × 8) is prohibited.
• Programming to the address that already contains data is prohibited.
(It is mandatory to erase data prior to overprogram on the same address.)
■ PACKAGES
56-pin plastic TSOP (1)
80-ball plastic FBGA
(FPT-56P-M01)
* : MirrorFlash^TM is a trademark of Fujitsu Limited.
(BGA-80P-M02)