MBM29PDS322TE Datasheet, PDF (1/66 Pages) Fujitsu Component Limited. – 32M (2M x 16) BIT Page Dual Operation

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20889-1E
FLASH MEMORY
CMOS
32M (2M × 16) BIT Page Dual Operation
MBM29PDS322TE/BE 10/11
s DESCRIPTION
The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The
device is offered in 63-ball FBGA package. This device is designed to be programmed in system with standard
system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can
also be reprogrammed in standard EPROM programmers.
The device is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory
arrays as far as certain operations are concerned. This device is the same as Fujitsu’s standard 1.8 V only Flash
memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of
the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the
other bank.
s PRODUCT LINE-UP
(Continued)
Part No.
Ordering Part No.
VCC = 2.0 V
+0.2 V
–0.2 V
Max. Random Address Access Time (ns)
Max. Page Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
MBM29PDS322TE/BE
10
11
100
115
45
45
100
115
35
45
s PACKAGE
63-ball plastic FBGA
(BGA-63P-M01)