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MBM29F016A Datasheet, PDF (1/43 Pages) SPANSION – FLASH MEMORY CMOS 16M (2M x 8) BIT | |||
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FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16M (2M Ã 8) BIT
DS05-20844-4E
MBM29F016A-70/-90/-12
s FEATURES
⢠Single 5.0 V read, write, and erase
Minimizes system level power requirements
⢠Compatible with JEDEC-standard commands
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
⢠48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)
⢠Minimum 100,000 write/erase cycles
⢠High performance
70 ns maximum access time
⢠Sector erase architecture
Uniform sectors of 64 K bytes each
Any combination of sectors can be erased. Also supports full chip erase.
⢠Embedded Erase⢠Algorithms
Automatically pre-programs and erases the chip or any sector
⢠Embedded Program⢠Algorithms
Automatically programs and verifies data at specified address
⢠Data Polling and Toggle Bit feature for detection of program or erase cycle completion
⢠Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
⢠Low VCC write inhibit ⤠3.2 V
⢠Hardware RESET pin
Resets internal state machine to the read mode
⢠Erase Suspend/Resume
Supports reading or programming data to a sector not being erased
⢠Sector group protection
Hardware method that disables any combination of sector groups from write or erase operation (a sector group
consists of 4 adjacent sectors of 64 K bytes each)
⢠Temporary sector groups unprotection
Temporary sector unprotection via the RESET pin
Embedded Eraseâ¢, Embedded Program⢠and ExpressFlash⢠are trademarks of Advanced Micro Devices, Inc.
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