MBM29DL64DF-70 Datasheet, PDF (1/68 Pages) Fujitsu Component Limited. – FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20905-1E
FLASH MEMORY
CMOS
64 M (8 M × 8/4 M × 16) BIT
Dual Operation
MBM29DL64DF-70
s DESCRIPTION
MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16
bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be
programmed in system with 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations.
The device can also be reprogrammed in standard EPROM programmers.
The device is organized into four physical banks : Bank A, Bank B, Bank C and Bank D, which are considered to
be four separate memory arrays operations. This device is the almost identical to Fujitsu’s standard 3 V only Flash
memories, with the additional capability of allowing a normal non-delayed read access from a non-busy bank of
the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the
other bank.
s PRODUCT LINE UP
(Continued)
Part No.
Power Supply Voltage VCC (V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
MBM29DL64DF-70
3.0
V
+0.6 V
−0.3 V
70
70
30
s PACKAGES
48-pin plastic TSOP (1)
48-ball plastic FBGA
Marking Side
(FPT-48P-M19)
(BGA-48P-M13)