MBM29DL16XTD Datasheet, PDF (1/76 Pages) Fujitsu Component Limited. – 16M (2M x 8/1M x 16) BIT Dual Operation

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20874-4E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT Dual Operation
MBM29DL16XTD/BD -70/90/12
s FEATURES
• 0.33 µm Process Technology
• Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to Table 1)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
s PRODUCT LINE UP
(Continued)
Part No.
Ordering Part No.
VCC = 3.3 V
+0.3 V
–0.3 V
VCC = 3.0 V
+0.6 V
–0.3 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
MBM29DL16XTD/MBM29DL16XBD
70
—
—
—
90
12
70
90
120
70
90
120
30
35
50
s PACKAGES
48-pin plastic TSOP (I)
Marking Side
48-pin plastic TSOP (I)
48-pin plastic FBGA
(FPT-48P-M19)
Marking Side
(FPT-48P-M20)
Embedded Erase^TM and Embedded Program^TM are trademarks of Advanced Micro Devices, Inc.
(BGA-48P-M13)