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MB85R2002 Datasheet, PDF (1/12 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 2 M Bit (128 K × 16) | |||
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FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
CMOS
2 M Bit (128 K Ã 16)
DS05-13108-2E
MB85R2002
â DESCRIPTIONS
The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words à 16 bits
of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R2002 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R2002 can be used for at least 1010 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R2002 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
â FEATURES
⢠Bit configuration
: 131,072 words à 16 bits
⢠Read/write endurance
: 1010 times/bit (Min)
⢠Operating power supply voltage : 3.0 V to 3.6 V
⢠Operating temperature range : -20 °C to +85 °C
⢠Data retention
: 10 years (+55 °C)
⢠LB and UB data byte control
⢠Package
: 48-pin plastic TSOP (1)
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