MB82DP02183E-65L Datasheet, PDF (1/1 Pages) Fujitsu Component Limited. – 32 Mbit Mobile FCRAM 3.0 V, Page Mode

FUJITSU SEMICONDUCTOR
INTRODUCTION SHEET
32 Mbit Mobile FCRAM ^TM
3.0 V, Page Mode
MB82DP02183E-65L
FEATURES
• _{Pseudo SRAM with Asynchronous SRAM Interface}
• _{8 Words Page Read Access Capability}
_____ ______
• _{Byte Control by LB, UB}
• _{Low Power Consumption}
• _{Various Power Down Mode}
Sleep
4 Mbit Partial
8 Mbit Partial
• _{Chip / Wafer Business}
MAIN SPECIFICATIONS
Part Number
Organization
Supply Voltage
Page Address Access Time (Max.)
Address Access Time (Max.)
Active Current (Max.)
Standby Current (Max.)
Power Down Current (Max.)
Sleep
NP05-11449-2E
MB82DP02183E-65L
2 M Word × 16 bit
2.6 V to 3.1 V
20 ns
65 ns
30 mA
120 μA
10 μA
Note: FCRAM is a trademark of Fujitsu Limited, Japan.
September, 2007
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Copyright©2007 FUJITSU LIMITED All rights reserved