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MB82DDS08314A-75L Datasheet, PDF (1/1 Pages) Fujitsu Component Limited. – 256 Mbit Mobile FCRAM 1.8 V, DDR Burst Mode | |||
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FUJITSU SEMICONDUCTOR
INTRODUCTION SHEET
256 Mbit Mobile FCRAMTM
1.8 V, DDR Burst Mode
MB82DDS08314A-75L
NP05-11444-2E
FEATURES
⢠Pseudo SRAM with Double Data Rate (DDR) Burst Interface
⢠Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 4
⢠DDR Burst Mode Function
⢠Multiplexed Address and Data Bus
⢠Short Initial Latency
⢠High-speed Data Transfer Rate
⢠Various Power Down Mode
Sleep
32 Mbit Partial
64 Mbit Partial
128 Mbit Partial
⢠Shipping Form : Wafer and Chip
MAIN SPECIFICATIONS
Part Number
Organization
I/O Bus Configuration
Interface
Supply Voltage
Burst Frequency (Max.)
Data Transfer Rate
_______
Data Access Time from CLK & CLK (Max.)
Active Current (Max.)
Standby Current (Max.)
Power Down Current (Max.)
Sleep
MB82DDS08314A-75L
8 M WORD Ã 32 BIT
à 32 Multiplexed Address and Data Bus
Double Data Rate (DDR)
1.75 V to 1.95 V
135 MHz
1G byte / s
6 ns
40 mA
250 μA
10 μA
Note: FCRAM is a trademark of Fujitsu Limited, Japan.
September, 2007
1/1
Copyright©2006-2007 FUJITSU LIMITED All rights reserved
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