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MB82DBS16164A-80L Datasheet, PDF (1/1 Pages) Fujitsu Component Limited. – 256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode
FUJITSU SEMICONDUCTOR
INTRODUCTION SHEET
256 Mbit Mobile FCRAMTM
1.8 V, SDR Burst Mode
MB82DBS16164A-80L
NP05-11446-2E
FEATURES
• Pseudo SRAM with Single Data Rate (SDR) Burst Interface
• Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 3
• SDR Burst Mode Function
• Asynchronous Mode Capability
_____ ______
• Byte Control by LB, UB
• Various Power Down Mode
Sleep
32 Mbit Partial
64 Mbit Partial
128 Mbit Partial
• Shipping Form : Wafer and Chip
MAIN SPECIFICATIONS
Part Number
Organization
Supply Voltage
Burst Data Transfer Interface
Burst Frequency (Max.)
Data Transfer Rate (Max.)
CLK Access Time (Max.)
RL=8, 7
Active Current (Max.)
Standby Current (Max.)
Power Down Current (Max.)
Sleep
MB82DBS16164A-80L
16 M WORD × 16 BIT
1.7 V to 1.95 V
Single Data Rate (SDR)
100 MHz
200M byte / s
7 ns
40 mA
250 μA
10 μA
Note: FCRAM is a trademark of Fujitsu Limited, Japan.
September, 2007
1/1
Copyright©2007 FUJITSU LIMITED All rights reserved