MB82DBS04164E-70L Datasheet, PDF (1/1 Pages) Fujitsu Component Limited. – 64 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode

FUJITSU SEMICONDUCTOR
INTRODUCTION SHEET
64 Mbit Mobile FCRAM ^TM
1.8 V, Burst Mode & Page Mode
MB82DBS04164E-70L
NP05-11448-2E
FEATURES
• _{Pseudo SRAM with Single Data Rate (SDR) Burst Interface}
• _{Complies with Common Specifications for Mobile RAM (COSMORAM) Revision 3}
• _{8 Words Page Read Access Capability}
_____ ______
• _{Byte Control with LB, UB pin}
• _{Low Power Consumption}
• _{Various Power Down Mode}
Sleep
8 Mbit Partial
16 Mbit Partial
32 Mbit Partial
• _{Chip / Wafer Business}
• _{71pin Plastic FBGA Package for Engineering Sample only}
MAIN SPECIFICATIONS
Part Number
Organization
Supply Voltage
Burst Frequency (Max.)
RL＝7
CLK Access Time (Max.)
RL＝6, 7
Page Address Access Time (Max.)
Address Access Time (Max.)
Active Current (Max.)
Standby Current (Max.)
Power Down Current (Max.)
Sleep
MB82DBS04164E-70L
4 M WORD × 16 BIT
1.7 V to 1.95 V
104 MHz
7 ns
20 ns
70 ns
40 mA
200 μA
10 μA
Note: FCRAM is a trademark of Fujitsu Limited, Japan.
September, 2007
1/1
Copyright©2007 FUJITSU LIMITED All rights reserved