MB82DBS02163E-70L Datasheet, PDF (1/1 Pages) Fujitsu Component Limited. – 32 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode

FUJITSU SEMICONDUCTOR
INTRODUCTION SHEET
32 Mbit Mobile FCRAM ^TM
1.8 V, Burst Mode & Page Mode
MB82DBS02163E-70L
NP05-11450-2E
FEATURES
• _{Pseudo SRAM with Asynchronous / Synchronous SRAM Interface}
• _{COSMORAM (Common Specifications for Mobile RAM ) Revision 2}
• _{Burst Mode Function (Synchronous Operation)}
• _{8 Words Page Read Access Capability}
_____ ______
• _{Byte Control by LB, UB}
• _{Low Power Consumption}
• _{Various Power Down Mode}
Sleep
4 Mbit Partial
8 Mbit Partial
• _{Chip / Wafer Business}
MAIN SPECIFICATIONS
Part Number
Organization
Supply Voltage
Burst Frequency (Max.)
RL＝6
CLK Access Time (Max.)
RL＝5, 6
Page Address Access Time (Max.)
Address Access Time (Max.)
Active Current (Max.)
Standby Current (Max.)
Power Down Current (Max.)
Sleep
MB82DBS02163E-70L
2 M Word × 16 bit
1.7 V to 1.95 V
83 MHz
8 ns
20 ns
70 ns
30 mA
120 μA
10 μA
Note: FCRAM is a trademark of Fujitsu Limited, Japan.
September, 2007
1/1
Copyright©2007 FUJITSU LIMITED All rights reserved