FSX017WF Datasheet, PDF (1/4 Pages) Fujitsu Component Limited. – General Purpose GaAs FET

FSX017WF
General Purpose GaAs FET
FEATURES
• Medium Power Output: P1dB=21.5dB (Typ.)@8.0GHz
• High Power Gain: G1dB=11dB (Typ.)@8.0GHz
• Hermetic Metal/Ceramic Package
• Proven Reliability
DESCRIPTION
The FSX017WF is a general purpose GaAs FET designed for medium
power applications up to the 12GHz. These devices have a wide
dynamic range and are suitable for use in medium power, wide band,
linear drive amplifiers or oscillators.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
Ptot
Tstg
Tch
Tc = 25°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain - source operating voltage (VDS) should not exceed 8 volts.
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with
gate resistance of 2000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
12
-5
1.0
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Saturated Drain Current
IDSS VDS = 3V, VGS = 0V
35 55 75
Transconductance
gm VDS = 3V, IDS = 27mA
-
50
-
Unit
V
V
W
°C
°C
Unit
mA
mS
Pinch-off Voltage
Vp VDS = 3V, IDS = 2.7mA -0.7 -1.2 -1.7
V
Gate Source Breakdown Voltage VGSO IGS = -2.7µA
-5.0 ^-
-
V
Noise Figure
Associated Gain
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Thermal Resistance
CASE STYLE: WF
NF
Gas
P1dB
G1dB
Rth
- 2.5 -
dB
VDS = 3V, IDS = 10mA
f = 8GHz
- 10.5 ^-
dB
f = 4GHz - 21.5 -
VDS = 8V,
f = 8GHz 20.5 21.5 ^-
IDS = 0.7IDSS _{f = 12GHz - 20.5 -}
f = 4GHz - 15.0 -
VDS = 8V,
IDS = 0.7IDSS
f = 8GHz
f = 12GHz
10.0
-
11.0
7.5
-
-
Channel to Case
- 120 150
dBm
dBm
dBm
dB
dB
dB
°C/W
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
1