FMM5017VF Datasheet, PDF (1/4 Pages) Fujitsu Component Limited. – GaAs MMIC

FEATURES
• High Output Power: 29dBm (typ.)
• High Linear Gain: 20dB (typ.)
• Low In/Out VSWR
• Integrated Output Power Monitor
• Impedance Matched Zin/Zout = 50Ω
• Small Hermetic Metal-Ceramic Package (VF)
FMM5017VF
GaAs MMIC
DESCRIPTION
The FMM5017VF is a MMIC amplifier designed for VSAT applications
as a driver or output stage in the 14.0 to 14.5 GHz band. This device
is well suited for designs that require less than 1 Watt and lower cost.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Rating
DC Input Voltage
DC Input Voltage
Input Power
Storage Temperature
Operating Case Temperature
VDD
VGG
Pin
Tstg
Top
12
-7
17
-55 to +125
-40 to +85
Unit
V
V
dBm
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Frequency Range
f
14.0 ~ 14.5
Output Power at 1dB G.C.P.
P1dB
28.0 29.0 ^-
Linear Gain
Gain Flatness
Input VSWR
G
∆G
VSWRi
VDD = 10V
VGG = -5V
f = 14.0 to 14.5 GHz
18.0 20.0 -
- 1.0 1.5
- 2:1 2.3:1
Output VSWR
VSWRo
- 2.3:1 3:1
Power Monitor
Vmon Pout = 28.0dBm
- 2.5 -
DC Input Current
DC Input Current
CASE STYLE: VF
IDD
VDD = 10V
IGG ^{VGG = -5V}
- 700 1000
- 15 20
Unit
GHz
dBm
dB
dB
-
-
V
mA
mA
Edition 1.1
August 1999
1