FLU17ZM Datasheet, PDF (1/8 Pages) Fujitsu Component Limited. – L-Band Medium & High Power GaAs FET

FLU17ZM
FEATURES
・High Output Power: P1dB=32.5dBm(typ.)
・High Gain: G1dB=12.5dB(typ.)
・Low Cost Plastic(SMT) Package
・Tape and Reel Available
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU17ZM is a GaAs FET designed for base station and CPE
applications. This is a new product series using a plastic surface mount
package that has been optimized for high volume cost driven applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃)
Item
Drain-Source Voltage
Gate-Soutce Voltage
Total Power Dissipation
Symbol
VDS
VGS
PT
Rating
Unit
15
V
-5
V
8.3
W
Storage Temperature
Tstg
-55 to +150
℃
Channel Temperature
Tch
150
℃
Recommended Operating Condition (Case Temperature Tc=25℃)
Item
DC Input Voltage
Channel Temperature
Forward Gate Current
Reverse Gate Current
Gate Resistance
Symbol
VDS
Tch
Igsf
Igsr
Rg
Condition
Unit
≤ 10
V
≤ 145
℃
≤ 9..6
mA
≥-1.0
mA
200
Ω
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃)
Item
Drain Current
Transconductance
Pinch-off Voltage
Symbol
IDSS
gm
Vp
Test Conditions
VDS=5V, VGS=0V
VDS=5V, IDS=400mA
VDS=5V, IDS=30mA
Min.
-
-
-1.0
Limit
Typ.
600
300
-2.0
Max. ^Unit
900
mA
-
mS
-3.5
V
Gate-Source Breakdown
Voltage
VGSO
IGS=-30uA
-5
-
-
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS=10V,
f=2.0GHz,
IDS=0.6IDSS(Typ.)
31.5
11.5
32.5
12.5
-
dBm
-
dB
Thermal Resistance
Rth
Channel to Case
-
12
15 ℃/W
CASE STYLE: ZM
G.C.P.:Gain Compression Point
Note 1: Product supplied to this specification are 100% DC performance tested.
Note 2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
ESD
Class Ⅱ
500 ～ 1999 V
Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5kΩ)
Edition 1.1
May 2003
1