FLL600IQ-2 Datasheet, PDF (1/4 Pages) Fujitsu Component Limited. – Push-Pull Configuration, Broad Frequency Range: 800 to 2000 MHz, Suitable for class AB operation

FLL600IQ-2
FEATURES
• Push-Pull Configuration
• High Power Output: 60W (Typ.)
• High PAE: 43% (Typ.)
• Broad Frequency Range: 800 to 2000 MHz.
• Suitable for class AB operation.
DESCRIPTION
The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain,
long term reliability and ease of use.
APPLICATIONS
• Solid State Power Amplifier.
• PCS/PCN Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Symbol
Condition
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
V_DS
V_GS
P_T
T_stg
T_ch
Tc = 25°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 78 and -32 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
125
-65 to +175
+175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Unit
Drain Current
I_DSS
V_DS = 5V, V_GS = 0V
- 24 32
A
Transconductance
gm
V_DS = 5V, I_DS = 14.4A
- 12 ^-
S
Pinch-Off Voltage
V_p
V_DS = 5V, I_DS = 1.44A -1.0 -2.0 -3.5
V
Gate-Source Breakdown Voltage V_GSO I_GS = -1.44mA
-5
-
-
V
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IQ
P_1dB
G_1dB
I_DSR
η_add
R_th
V_DS = 12V
f=1.96GHz
I_DS = 4.0A
Channel to Case
47.0
9.5
-
-
-
48.0 -
dBm
10.5 -
dB
11.0 15.0
A
43 -
%
0.8 1.2
°C/W
G.C.P.: Gain Compression Point
Edition 1.7
December 1999
1