FLL410IK-4C Datasheet, PDF (1/6 Pages) Fujitsu Component Limited. – L-Band High Power GaAs FET

FLL410IK-4C
FEATURES
・High Output Power: Pout=46.0dBm(Typ.)
・High Gain: GL=11.5dB(Typ.)
・High PAE: ηadd=44%(Typ.)
・Broad Band: 3.4~3.7GHz
・Hermetically Sealed Package
L-Band High Power GaAs FET
DESCRIPTION
The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is
designed for use in 3.4 – 3.7 GHz band amplifiers. This new product
is uniquely suited for use in WLL applications as it offers excellent
linearity, high efficiency, high gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^oC)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
107.0
W
Storage Temperature
Tstg
-65 to +175
o_C
Channel Temperature
Tch
175
o_C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25^oC)
Item
Symbol
Condition
Limit
Unit
DC Input Voltage
Gate Current
VDS
IGF
RG=5Ω
≤12
V
≤117
mA
Gate Current
IGR
RG=5Ω
≥-23
mA
Operating Channel Temperature
Tch
≤145
o_C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)
Item
Drain Current
Pinch-off Voltage
Gate-Source Breakdown Voltage
Symbol
IDSS
Vp
VGSO
Test Conditions
VDS=5V , VGS=0V
VDS=5V , IDS=100mA
IGS=-1.0mA
Min.
-
-0.1
-5.0
Limit
Typ.
4.0
-0.3
-
Max. ^Unit
-
A
-0.5
V
-
V
Output Power
Linear Gain *¹
Drain Current
Power-added Efficiency
POUT
GL
Idsr
ηadd
VDS=12V
f=3.6 GHz
IDS=3A
Pin=36.0dBm
45.0 46.0
10.5 11.5
-
6.7
-
44
-
dBm
-
dB
8.7
A
-
%
Thermal Resistance
Rth
*１：GL is measured at Pin=22.0dBm
Channel to Case
-
1.0
1.4
o_C/W
CASE STYLE: IK
ESD
Class Ⅲ
2000V　~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.1
Oct 2003
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