FLL2400IU-2C Datasheet, PDF (1/4 Pages) Fujitsu Component Limited. – L-Band High Power GaAs FET

FEATURES
• Push-Pull Configuration
• High Power Output: 240W (Typ.)
• Broad Frequency Range: 2100 to 2200 MHz.
• Suitable for class AB operation.
FLL2400IU-2C
L-Band High Power GaAs FET
DESCRIPTION
The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is well suited for use in W-CDMA and IMT 2000 base station
amplifiers as it offers high gain, long term reliability and ease of use.
APPLICATIONS
• Solid State Base-Station Power Amplifier.
• W-CDMA and IMT 2000 Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
V_DS
15
V_GS
-5
P_T
Tc = 25°C
230
T_stg
-65 to +175
T_ch
+175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 367 and -161 mA respectively with
gate resistance of 1.5Ω.
3. The operating channel temperature (Tch) and case temperature (Tc) should not exceed 145°C and 80°C respectively.
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Symbol
Conditions
Drain Current
I_DSS
V_DS = 5V, V_GS = 0V
Pinch-Off Voltage
V_p
V_DS = 5V, I_DS = 680mA
Gate-Source Breakdown Voltage
Output Power
Linear Gain
V_GSO
P_out
GL
I_GS = -6.8mA
VDS = 12V
f = 2.17 GHz
IDS = 6.0A
Pin = 45.0dBm
Note 1
Thermal Resistance
R_th
Channel to Case
CASE STYLE: IU
Note 1: The RF test are performed using a P.W. = 1msec., Duty Cycle = 20%
Limits
Min. Typ. Max.
- 32 -
-0.1 -0.3 -0.5
-5
-
-
52.8 53.8 -
10.5 11.5 -
- _{0.45 0.65}
Unit
A
V
V
dBm
dB
°C/W
Edition 1.0 Preliminary
November 2000
1