FLL1200IU-2 Datasheet, PDF (1/4 Pages) Fujitsu Component Limited. – L-Band Medium & High Power GaAs FET

FEATURES
• Push-Pull Configuration
• High Power Output: 120W (Typ.)
• High PAE: 44%.
• Broad Frequency Range: 1800 to 2000 MHz.
• Suitable for class AB operation.
FLL1200IU-2
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in PCS/PCN base station amplifiers
as it offers high gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Symbol
Condition
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
V_DS
15
V_GS
-5
P_T
Tc = 25°C
187.5
T_stg
-65 to +175
T_ch
+175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 156.0 and -57.6 mA respectively with
gate resistance of 10Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Drain Current
I_DSS
V_DS = 5V, V_GS = 0V
- 48 72
Transconductance
gm
V_DS = 5V, I_DS = 28.8A
- 24 ^-
Pinch-Off Voltage
V_p
V_DS = 5V, I_DS = 2.88A -1.0 -2.0 -3.5
Gate-Source Breakdown Voltage V_GSO I_GS = -2.88mA
-5
-
-
Output Power
Linear Gain
Drain Current
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IU
P_out
GL
I_DSR
η_add
R_th
V_DS = 12V
f=1.96 GHz
I_DS = 5.0A
Pin = 41.0dBm
Channel to Case
49.8 50.8 -
10.0 11.0 -
- 20 30
- 44 -
- _{0.6 0.8}
Unit
A
S
V
V
dBm
dB
A
%
°C/W
Edition 1.7
December 1999
1