1MBI300S-120 Datasheet, PDF (1/4 Pages) Fujitsu Component Limited. – 1-Pack IGBT 1200V 1x300A

1MBI 300S-120
1-Pack IGBT
1200V
1x300A
IGBT MODULE ( S-Series )
I Features
• NPT-Technology
• Square SC SOA at 10 x I_C
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
Switching Loss
• Low Losses And Soft Switching
I Outline Drawing
I Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
I Maximum Ratings and Characteristics
I Equivalent Circuit
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
1200
± 20
V
Continuous 25°C / 80°C
IC
400 / 300
Collector
Current
1ms
25°C / 80°C
Continuous
IC PULSE
-IC
800 / 600
300
A
1ms
-IC PULSE
600
Max. Power Dissipation
PC
2100
W
Operating Temperature
Storage Temperature
Tj
Tstg
+150
-40 ∼ +125
°C
Isolation Voltage
*¹
A.C. 1min.
Vis
2500
V
Mounting *²
3.5
Screw Torque
Terminals *²
4.5
Nm
Terminals *²
1.7
Note: 1*: All Terminals should be connected together when isolation test will be done.
2*: Recommendable Value: Mounting 2.5 ∼ 3.5 Nm (M5) or (M6) ; Terminal 3.5 ∼ 4.5 Nm (M6), 1.3 ∼ 1.7 Nm (M4)
• Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Test Conditions
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Time
Turn-off Time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr,x
tr,i
tOFF
tf
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=20V IC=300mA
VGE=15V IC=300A
VGE=0V
VCE=10V
f=1MHz
VCC = 600V
IC = 300A
VGE = ±15V
RG = 2.7Ω
Inductive Load
Tj = 25°C
Tj =125°C
Diode Forward On-Voltage
Reverse Recovery Time
VF
IF=300A; VGE=0V
Tj = 25°C
Tj =125°C
trr
IF=300A
Min.
Typ.
5.5
7.2
2.3
2.8
36’000
7’500
6’600
0.35
0.25
0.10
0.45
0.08
2.3
2.0
Max.
4.0
800
8.5
2.6
1.2
0.6
1.0
0.3
3.0
350
Units
mA
nA
V
pF
µs
V
ns
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
0.0125
Max.
0.06
0.17
Units
°C/W