2MBI300U4H-120 Datasheet, PDF (9/13 Pages) Fuji Electric – IGBT MODULE

Collector current vs. Collector-Emitter voltage (typ.)
Tj=25^oC / chip
800
VGE=20V 15V 12V
600
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125^oC / chip
800
VGE=20V 15V
12V
600
400
10V
200
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
800
Tj=25^oC
600
Tj=125^oC
400
200
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25^oC
100.0
Cies
10.0
Cres
1.0
Coes
0.1
0
10
20
30
Collector-Emitter voltage : VCE [ V ]
400
10V
200
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25^oC / chip
10
8
6
4
2
Ic=600A
Ic=300A
Ic=150A
0
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=300A, Tj=25^oC
VGE
VCE
0
0
400
800
1200
1600
Gate charge : Qg [ nC ]
MS5F6037
9
13
H04-004-03a