6MBP50RA120 Datasheet, PDF (6/7 Pages) Fuji Electric – IGBT(1200V/50A)

6MBP50RA120
IGBT-IPM
Transient therm al resistance
1
FW D
IG BT
0.1
0.01
0.001
0.01
0.1
1
P ulse width :P w (sec)
R eversed biased sa fe operatin g area
V cc = 1 5 V ,T j ^<= 1 2 5 °C
700
600
500
400
SCSOA
300
(no n-rep etitive pulse)
200
100
00
RBSOA
(Rep etitive pulse)
200 400 600 800 1000 1200
C olle cto r-Em itter voltag e : Vc e (V )
1400
400
350
300
250
200
150
100
50
0
0
Powe r derating for IGBT
(per device)
20 40 60 80 100 120 140 160
Case Tem perature : Tc (°C)
Switching Loss vs. C ollector Current
E d c = 6 0 0 V ,V c c = 1 5 V ,Tj= 2 5 °C
25
20
15
10
5
0
0
Eon
Eo ff
E rr
10 20 30 40 50 60 70 80
C ollector current : Ic (A)
Power derating for FW D
(per device)
150
125
100
75
50
25
0
0
20 40 60 80 100 120 140 160
Case Tem perature : Tc (°C)
Switching Loss vs. C ollec tor Current
Edc=600V,Vcc=1 5V,Tj=125°C
25
20
Eon
15
10
Eo ff
5
E rr
0
0
10
20
30
40
50
60
70
80
C ollector current : Ic (A )