YG858C12R Datasheet, PDF (4/6 Pages) Fuji Electric – Schottky Barrier Diode

YG858C12R
Current Derating (Io-Tc) (max.)
160
150
140
130
120
110
100
DC
90
Sine wave λ=180°
80
Square wave λ=180°
70
360°
60
I₀
50
λ
VR=60V
Square wave λ=120°
Square wave λ=60°
40
0
5
10 15 20 25 30 35 40 45
Ｉｏ Average Output Current （Ａ）
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
FUJI Diode
http://www.fujisemi.com
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)
Surge Capability (max.)
1000
100
10
1
10
100
Number of Cycles at 50Hz
4