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| YG852C12R Datasheet, PDF (4/6 Pages) Fuji Electric – Schottky Barrier Diode | |||
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YG852C12R
Current Derating (Io-Tc) (max.)
160
150
140
130
DC
120
110
360°
Sine wave λ=180°
Square wave λ=180°
Square wave λ=120°
100
I0
λ
VR=60V
Square wave λ=60°
90
0
5
10
15
ï¼©ï½ Average Output Current ï¼ï¼¡ï¼
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Surge Capability (max.)
100
FUJI Diode
http://www.fujisemi.com
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)
10
1
10
100
Number of Cycles at 50Hz
4
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